A designing roule for a pressure sensor with PZT layer

Proceedings of the International Semiconductor Conference, CAS

Volumn 2, Issue , 2001, Pages 379-382

  Ravariu, C ^a   Ravariu, Florina ^a   Dobrescu, D ^a   Dobrescu, Lidia ^a   Codreanu, Cecilia ^a   Avram, Marioara ^a  

^a UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

LEAD COMPOUNDS; MATHEMATICAL MODELS; MOSFET DEVICES; PIEZOELECTRIC MATERIALS; PIEZOELECTRICITY; PRESSURE EFFECTS; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; TRANSDUCERS;

LEAD ZIRCONATE TITANATE; PIEZOELECTRIC LAYERS; PRESSURE SENSOR;

SENSORS;

EID: 0035744273     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. SOI'SIMOX': From bulk to surface micromachining, a new age for silicon sensors and actuators
2. The influence of buried insulator type and film thickness on threshold voltage of a partially and fully depleted SOI-MOSFET
3. Processing of PZT piezoelectric thick films on silicon for microelectromechanical systems