New application of surface-barrier GaP photodiodes

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 2001, Pages 185-188

  Malik, A ^a   Vygranenko, Yu ^a   Shabashkevich, B ^a   Piroszenko, S ^a  

^a INSTITUTO NACIONAL DE ASTROFÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FLUORINE; HETEROJUNCTIONS; OPTICAL DESIGN; OPTICAL PROPERTIES; QUANTUM EFFICIENCY; RADIOMETERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; THIN FILMS; TIN;

FLUORINE DOPED TIN OXIDE; GALLIUM PHOSHIDE; TIN DOPED INDIUM OXIDE;

PHOTODIODES;

EID: 0035744136     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)