A new high ultraviolet sensitivity FTO-GaP Schottky photodiode fabricated by spray pyrolysis

Semiconductor Science and Technology

Volumn 13, Issue 1, 1998, Pages 102-107

  Malik, Alexander ^a   Sêco, Ana ^a   Fortunato, Elvira ^a   Martins, Rodrigo ^a   Shabashkevich, Boris ^b   Piroszenko, Sergei ^b  

^a UNINOVA   (Portugal)

^b Scientific and Production Company   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009685186     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/1/016     Document Type: Article

References (20)

1. Li S S, Lindholm F A and Wang C T 1972 J. Appl. Phys. 43 4123
2. Ouchi H, Makai T, Kamei T and Okamura M 1979 IEEE Trans. Electron Devices 26 1965
3. Hansen T E 1978 Phys. Scr. 18 471
4. Munch W 1977 Japan. J. Appl. Phys. 16 271
5. Chamberlain S 1979 J. Appl. Phys. 50 7228
6. Malik A I, Grechko V A and Anikin V E 1989 Sov. Phys. Tech. Phys. 34 1289
7. Malik A I and Grushka GG 1991 Sov. Phys. Semicond. 25 1017
8. Burstein E 1954 Phys. Rev. 93 632
9. Heavens O S 1955 Optical Properties of Thin Solid Films (London: Academic)
10. v Compounds (Kishinev: Stiintca) (in Russian)
11. Moore A R 1980 Appl. Phys. Lett. 37 327
12. Tarr N G and Pulfrey D L 1979 Appl. Phys. Lett. 34 295
13. Sze S M 1985 Semiconductor Devices Physics and Technology (New York: Wiley)
14. Rhoderick E H and Williams R H 1988 Metal-Semiconductor Contacts (New York: Oxford University Press)
15. Gol'dberg A Yu and Tsarenkov G V 1986 Poluprovodn. Tekh. Mikroelektron. 27 33 (Moscow: Nauka) (in Russian)
16. Singh R and Shewchun J 1978 Appl. Phys. Lett. 33 601
17. Fowler RH 1931 Phys. Rev. 38 45
18. Photodiodes, Catalogue no KPD 0001E02, February 94T (Hamamatsu Photonics KK) p 36
19. Gutkin A A, Dmitriev M V, Nasledov D N and Pashkovskii AV 1972 Sov. Phys. Semicond. 6 429
20. Razeghi M and Rogalski A 1996 J. Appl. Phys. 79 7433