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Volumn 642, Issue , 2001, Pages
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An analytical approach for computing the energy structure of InAs quantum dots
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE MEASUREMENT;
ELECTRONIC STRUCTURE;
HIGH RESOLUTION ELECTRON MICROSCOPY;
MOLECULAR BEAM EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
STRAIN MEASUREMENT;
SUBSTRATES;
TRANSMISSION ELECTRON MICROSCOPY;
CARRIER CONFINEMENT POTENTIALS;
ENERGY STRUCTURE;
EXCITED STATES;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
SPATIAL STRAIN DISTRIBUTION;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0035743466
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (2)
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References (18)
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