Analysis of low frequency memory and influence on solid state HPA intermodulation characteristics

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 979-982

  Le Gallou, N ^a   Nebus, J M ^b   Ngoya, E ^b   Buret, H ^a  

^a THALES ALENIA SPACE   (France)

^b UNIVERSITY OF LIMOGES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC IMPEDANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; INTERMODULATION; NUMERICAL ANALYSIS; SOLID STATE DEVICES; THERMAL EFFECTS;

LOW FREQUENCY MEMORY; LOW FREQUENCY NONLINEAR PHENOMENA; SOLID STATE HIGH POWER AMPLIFIERS;

POWER AMPLIFIERS;

EID: 0035694802     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967056     Document Type: Article

References (9)

1. 10W C-band highly efficient hybrid-MMIC amplifier
2. Optimal design of solid state multicarrier power amplifiers
3. Accurate RF and microwave system level modeling of wide band nonlinear circuits
4. A novel measurement method for the extraction of dynamic Volterra kernels of microwave power amplifiers
5. A pulsed measurement based electrothermal model of HBT with thermal stability prediction capabilities
6. Low frequency dispersion and its influence on the intermodulation performance of AlGaAs/GaAs HBTs
7. Third order intermodulation distortion caused by thermal power feedback
8. Measurement and simulation of memory effects in predistorsion linearizers
9. A novel envelope-termination load-pull method for ACPR optimization of RF/Microwave power amplifiers