Ultra-linear distributed class-AB LDMOS RF power amplifier for base stations

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 1363-1366

  Van Der Heijden, M P ^a   De Graaff, H C ^a   De Vreede, L C N ^a   Gajadharsing, J R ^b   Burghartz, J N ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; INTERMODULATION; MATHEMATICAL MODELS; MOS DEVICES; NUMERICAL METHODS; SIGNAL DISTORTION; TRANSCONDUCTANCE;

ADJACENT CHANNEL POWER RATIO; LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR; RADIO FREQUENCY POWER AMPLIFIER; THIRD ORDER INTERMODULATION DISTORTION;

RADIO FREQUENCY AMPLIFIERS;

EID: 0035692829     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967149     Document Type: Article

References (10)

1. Advantages of LDMOS in high power linear amplification
2. Novel circuit synthesis technique using short channel GaAs FETs giving reduced intermodulation distortion
3. Control of circuit distortion by the derivative superposition method
4. Nonlinear compensation technologies for microwave power amplifiers in radio communication systems
5. Evaluation and correction of time dependent amplifier nonlinearity
6. Optimizing linearity of a distributed base station amplifier using an automated high-speed measurement protocol