Switches with capacitor cancelled parasitic inductance of FET

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2001, Pages 249-252

  Nakahara, Kazuhiko ^a   Miyaguchi, Kenichi ^a   Hieda, Morishige ^a   Kurusu, Hitoshi ^a   Iyama, Yoshitada ^a   Takagi, Tadashi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CIRCUIT RESONANCE; INDUCTANCE; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SWITCHING CIRCUITS;

PARASITIC INDUCTANCE; SERIES SHUNT CONFIGURATION;

FIELD EFFECT TRANSISTORS;

EID: 0035692471     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.966881     Document Type: Article

References (4)

1. A high performance monolithic GaAs SPDT switch
2. High performance integrated PA, T/R switch for 1.9GHz personal communication handsets
3. A novel resonant-type GaAs SPDT switch IC with low distortion characteristics for 1.9GHz 9GHz personal handy-phone system
4. High-performance GaAs switch ICs fabricated using MESFETs with two kinds of pinch-off voltages