Novel resonant-type GaAs SPDT switchic with low distortion characteristics for 1.9 GHz personal handy-phone system

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1996, Pages 647-650

  Kawakyu, Katsue ^a   Ikeda, Yoshiko ^a   Nagaoka, Masami ^a   Ishida, Kenji ^a   Kameyama, Atsushi ^a   Nitta, Tomohiro ^a   Yoshimura, Misao ^a   Kitaura, Yoshiaki ^a   Uchitomi, Naotaka ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MESFET DEVICES; MOBILE RADIO SYSTEMS; PERSONAL COMMUNICATION SYSTEMS; RESONATORS; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL DISTORTION; SIGNAL RECEIVERS;

CHANNEL LEAKAGE POWER; HIGH ISOLATION; INSERTION LOSS; PERSONAL HANDY PHONE SYSTEM; POWER SUPPLY VOLTAGE; RESONANT TYPE SWITCH INTEGRATED CIRCUIT; SHUNT CAPACITOR; SINGLE POLE DOUBLE THROW;

INTEGRATED CIRCUITS;

EID: 0029698037     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)