A K-band subharmonic down-converter in a GaAs metamorphic HEMT process

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 1337-1339

  Matinpour, B ^a   Lal, N ^a   Laskar, J ^a   Leoni, R E ^a   Whelan, C S ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); HIGH ELECTRON MOBILITY TRANSISTORS; INSERTION LOSSES; INTEGRATED CIRCUIT MANUFACTURE; MICROWAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

CONVERSION LOSS; K-BAND; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; NOISE FIGURE; SUBHARMONIC DOWN-CONVERTER; SUBHARMONIC MIXER;

MIXER CIRCUITS;

EID: 0035689825     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967141     Document Type: Article

References (4)

1. Low noise In0.32AlGa0.68AsIn0.43Ga0.57As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density
2. High-performance double-recessed InAlAs/InGaAs power metamorphic HEMT on GaAs substrate
3. Harmonic mixing with an antiparallel diode pair
4. Reduced-size branch-line and rat-race hybrids for uniplanar MMIC's