A V-band MMIC SPDT passive HEMT switch using impedance transformation networks

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2001, Pages 253-256

  Wang, Yu Jiu ^a   Lin, Kun You ^a   Niu, Dow Chih ^a   Wang, Huei ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; INSERTION LOSSES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PASSIVE NETWORKS; SEMICONDUCTING GALLIUM ARSENIDE; SWITCHING CIRCUITS;

IMPEDANCE TRANSFORMATION; IMPEDANCE TRANSFORMATION NETWORKS; MILLIMETER WAVE FREQUENCY RANGE; SINGLE POLE DOUBLE THROW SWITCH;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035689760     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. 77 GHz high-isolation coplanar transmit-receive switch using InGaAs/InP PIN diodes
2. DC-40 GHz and 20-40 GHz MMIC SPDT switches
3. A high power K/Ka-band monolithic T/R switch
4. A high performance V-band monolithic FET transmit-receive switch
5. Q-band high isolation GaAs HEMT switches
6. Compact DC-60-GHz HJFET MMIC switches using ohmic electrode-sharing technology