Q-band high isolation GaAs HEMT switches

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1996, Pages 289-292

  Ingram, D L ^a   Cha, K ^a   Hubbard, K ^a   Lai, R ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; COMPUTER SIMULATION; ELECTRIC LOSSES; ELECTRIC NETWORK TOPOLOGY; FIELD EFFECT TRANSISTORS; FREQUENCIES; HIGH ELECTRON MOBILITY TRANSISTORS; MICROSTRIP LINES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSMISSION LINE THEORY; VOLTAGE CONTROL;

MILLIMETER WAVE FREQUENCIES; SINGLE POLE DOUBLE THROW SWITCH;

SWITCHES;

EID: 0030379074     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)