Dual bias feed SiGe HBT low noise linear amplifier

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2001, Pages 285-288

  Taniguchi, Eiji ^a   Maeda, Kenichi ^a   Ikushima, Takayuki ^a   Sadahiro, Keiichi ^a   Itoh, Kenji ^a   Suematsu, Noriharu ^a   Takagi, Tadashi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; POWER ELECTRONICS; POWER INTEGRATED CIRCUITS; RESISTORS; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

BASE BIAS CIRCUIT DESIGN; DIODE FEED CIRCUIT; DUAL BIAS FEED CIRCUIT; LOW NOISE AMPLIFIER; RESISTOR FEED CIRCUIT;

POWER AMPLIFIERS;

EID: 0035689741     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Intermodulation distortion of low noise silicon BJT and MOSFET fabricated in BiCMOS process
2. Low cost 900MHz single-chip cordless telephone receiver
3. A highly integrated radio for high performance, low cost 2.4GHz ISM cordless applications
4. A highly integrated dual-band tri-mode transceiver chipset for CDMA TIAEIA-95 and AMPS applications
5. A 5.8-GHz 1-V low-noise amplifier in SiGe bipolar technology