Intermodulation distortion of low noise silicon BJT and MOSFET fabricated in BiCMOS process

IEICE Transactions on Electronics

Volumn E82-C, Issue 5, 1999, Pages 692-697

  Suematsu, Noriharu ^a   Ono, Masayoshi ^a   Kudo, Shunji ^a   Uesugi, Mikio ^a   Hasegawa, Kouichi ^a   Hiroshige, Kenji ^a   Iyama, Yoshitada ^a   Takagi, Tadashi ^a   Ishida, Osami ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

BJT; CMOS; Distortion; Low noise; Mobile communication; Si mmic

Indexed keywords

AMPLIFIERS (ELECTRONIC); BISMUTH; CMOS INTEGRATED CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTERMODULATION; MOBILE TELECOMMUNICATION SYSTEMS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE;

BIPOLAR JUNCTION TRANSISTOR; INTERMODULATION DISTORTION; LOW NOISE AMPLIFIERS;

SIGNAL DISTORTION;

EID: 0033329078     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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