LDMOS electro-thermal model validation from large-signal time-domain measurements

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2001, Pages 399-402

  Gaddi, Roberto ^a   Pla, Jaime A ^b   Benedikt, Johannes ^a   Tasker, Paul J ^a  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC WAVEFORMS; MATHEMATICAL MODELS; OPTIMIZATION; SEMICONDUCTING SILICON; TIME DOMAIN ANALYSIS;

HARMONIC BALANCE SIMULATION; LARGE SIGNAL TIME DOMAIN MEASUREMENTS; NONLINEAR ELECTROTHERMAL MODEL; NONLINEAR VECTOR NETWORK ANALYZER;

MOS DEVICES;

EID: 0035689727     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.966915     Document Type: Article

References (9)

1. Validation of a nonlinear HEMT model by power spectrum characteristics
2. PSPICE model of the power LDMOS transistor for radio frequency applications in the 1.8-2.2 GHz band
3. High-power time-domain measurement system with active harmonic load-pull for high-efficiency base-station amplifier design
4. Applicability of non-linear modelling methods based on vectorial large-signal measurements to MOSFETs
5. 120 Watt, 2GHz, Si LDMOS RF power transistor for PCS base station applications
6. A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs
7. Direct extraction of LDMOS small signal parameters from off-state measurements
8. VIOMAP, the s-parameter equivalent for weakly nonlinear RF and microwave devices
9. Black box modelling of hard nonlinear behavior in the frequency domain