Study of di-hydrogen-monovacancy defect in silicon

Acta Physica Polonica A

Volumn 92, Issue 5, 1997, Pages 989-992

  Stallinga, P ^a   Nielsen, B B ^a  

^a AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007650872     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.92.989     Document Type: Article

References (8)

1. See Ph. D. Thesis of E.G. Sieverts, University of Amsterdam (1978), for a comprehensive survey of vacancy-type defects.
2. Yu.V. Gorelkinskii, N.N. Nevinnyi, Physica B 170, 155 (1991).
3. B.B. Nielsen, P. Johannesen, P. Stallinga, K.B. Nielsen, J.R. Byberg, to be published.
4. P. Stallinga, P. Johannesen, B.B. Nielsen, K.B. Nielsen, J.R. Byberg, in: Proc. of ICPS 23, Vol. 23, Eds. M. Scheffler, R. Zimmermann, World Scientific, Singapore 1996, p. 2589.
5. W.M. Chen, O.O. Awaldekarim, B. Monemar, J.L. Lindström, G.S. Oehrlein, Phys. Rev. Lett. 64, 3042 (1990).
6. K.L. Brower, Phys. Rev. B 4, 1968 (1971).
7. G.D. Watkins, Phys. Rev. 155, 1965 (1967).
8. D.H. Tanimoto, W.M. Ziniker, J.O. Kemp, Phys. Rev. Lett. 14, 645 (1965).