Ultra-violet photodetectors based on GaN and AlxGa1-xN epitaxial layers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4340, Issue , 2000, Pages 92-96

  Shmidt, N M ^a   Lundin, W V ^a   Sakharov, A V ^a   Usikov, A S ^a   Zavarin, E E ^a   Govorkov, A V ^b   Polyakov, A Y ^b   Smirnov, N B ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF RARE METALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTRONIC PROPERTIES; GALLIUM NITRIDE; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTIVITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM NITRIDE; CHARGED CENTERS; EPITAXIAL LAYERS; SCHOTTKY BARRIER HEIGHT; SCHOTTKY BARRIER PHOTODETECTOR;

ULTRAVIOLET DETECTORS;

EID: 0034460515     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.407713     Document Type: Article

References (0)