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Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 369-373

Erbium in Si and GaN: Extended versus point defects

(3) Citrin, P H a Hamann, D R a Northrup, P A a

a LUCENT TECHNOLOGIES (United States)

Author keywords

Density functional theory; Er doped Si; EXAFS; GaN

Indexed keywords

CHEMICAL BONDS; ERBIUM; GALLIUM NITRIDE; POINT DEFECTS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON; X RAY ANALYSIS;

X-RAY ABSORPTION;

SEMICONDUCTOR DOPING;

EID: 0035673640 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00703-7 Document Type: Article

Times cited : (5)

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