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Volumn 35, Issue 1, 2001, Pages 93-98

Influence of bismuth doping of InAs quantum-dot layer on the morphology and photoelectronic properties of Gas/InAs heterostructures grown by metal-organic chemical vapor deposition

(5) Zvonkov, B N a Karpovich, I A a Baidus' N V a Filatov, D O a Morozov, S V a

a LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035218664 PISSN: 10637826 EISSN: None Source Type: Journal
DOI: 10.1134/1.1340297 Document Type: Article

Times cited : (21)

References (12)

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- Baǐdus', N.V.¹ Zvonkov, B.N.² Filatov, D.O.³

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