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Volumn 7, Issue 6, 2001, Pages 643-649
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Anisotropic etching and electrochemical etch-stop properties of silicon in TMAH:IPA:Pyrazine solutions
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Author keywords
Anisotropic etching; Electrochemical etch stop; Etching rate; Flatness; Microdiaphragm; Passivation potential; Silicon; TMAH:IPA:Pyrazine solutions; Undercutting
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Indexed keywords
ANISOTROPIC ETCHING;
ANISOTROPY;
AROMATIC COMPOUNDS;
PASSIVATION;
SILICON;
SILICON COMPOUNDS;
SINGLE CRYSTALS;
ELECTRO CHEMICAL ETCH STOPS;
ETCHING RATE;
FLATNESS;
MICRODIAPHRAGM;
PASSIVATION POTENTIALS;
PYRAZINES;
UNDERCUTTING;
SILICON WAFERS;
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EID: 0035658309
PISSN: 12259438
EISSN: None
Source Type: Journal
DOI: 10.1007/bf03179265 Document Type: Article |
Times cited : (5)
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References (23)
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