Ultrafast intersubband transitions in heavily doped InGaAs/AlAsSb coupled double quantum well structures for all-optical switching

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 2001, Pages 792-793

  Yoshida, H ^a   Akiyama, T ^a   Mozume, T ^a   Georgiev, N ^a   Gopal, A V ^a   Wada, O ^a   Ishikawa, H ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON SCATTERING; ELECTRON TRANSITIONS; LASER BEAM EFFECTS; LASER PULSES; OPTICAL SWITCHES; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

INTERSUBBAND TRANSITIONS; OPTICAL SWITCHING;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0035656573     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)