1.5 μm wavelength GaInAsP/InP 5-layered quantum-wire lasers fabricated by CH4/H2 dry etching and regrowth

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 2001, Pages 407-408

  Midorikawa, H ^a   Muranushi, K ^a   Nunoya, N ^a   Sano, T ^a   Tamura, S ^a   Arai, S ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM EFFICIENCY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SPONTANEOUS EMISSION;

QUANTUM WIRE LASERS;

SEMICONDUCTOR LASERS;

EID: 0035651360     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)