Highly conductive Nb-doped BaTiO3 epitaxial thin films grown by laser molecular beam epitaxy

Chinese Physics Letters

Volumn 18, Issue 11, 2001, Pages 1513-1515

  Yan, Lei ^a   Lü, Hui Bin ^a   Chen, Zheng Hao ^a   Dai, Shou Yu ^a   Tan, Guo Tai ^a   Yang, Guo Zhen ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BARIUM TITANATE; CARRIER CONCENTRATION; CONDUCTIVE FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NIOBIUM COMPOUNDS; STRONTIUM TITANATES; THIN FILMS; X RAY DIFFRACTION;

ATOMIC-FORCE-MICROSCOPY; BEST VALUE; EPITAXIAL THIN FILMS; EPITAXIALLY GROWN; LASER MOLECULAR BEAM EPITAXY; NB DOPED; ROOT MEAN SQUARE; THIN-FILMS; X-RAY DIFFRACTION TECHNIQUES;

SURFACE ROUGHNESS;

EID: 0035633069     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/18/11/328     Document Type: Article

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