Structural and electronic properties of RuSi, RuGe and OsSi

Chinese Physics Letters

Volumn 18, Issue 10, 2001, Pages 1389-1391

  He, Guo Min ^a   Li, Shu Ping ^a   Huang, Mei Chun ^a  

^a XIAMEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; SILICON COMPOUNDS;

EXCHANGE-CORRELATION FUNCTIONALS; FIRST-PRINCIPLES DENSITY FUNCTIONAL CALCULATIONS; GENERALIZED GRADIENT APPROXIMATIONS; STRUCTURAL AND ELECTRONIC PROPERTIES; ULTRASOFT PSEUDOPOTENTIALS;

ELECTRONIC PROPERTIES;

EID: 0035601252     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/18/10/329     Document Type: Article

References (7)

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4. Buschinger B, Guth W, Weiden M, Geibel C, Steglich F, Vescoli V, Degiorgi L and Wassilew R C 1997 J. Alloys Compd. 262-263 238
5. Perring L and Gachon J C 1995 J. Alloys Compd. 224 228
6. Bockstedte M, Kley A and Scheffler M 1997 Comput. Phys. Commun. 107 187
7. Mattheiss L F and Hamann D R 1993 Phys. Rev. B 47 13114