Utilization of optical and electrical peculiarities of partially compensated zinc selenide

Materials Science in Semiconductor Processing

Volumn 4, Issue 6, 2001, Pages 601-605

  Prokesch, M ^a   Irmscher, K ^b   Makino, H ^a   Yao, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Absorption; Doping; Ionization energy; Mobility; Self activated; ZnSe

Indexed keywords

CARRIER MOBILITY; CRYSTAL GROWTH; CRYSTAL IMPURITIES; ELECTRON TRANSPORT PROPERTIES; HIGH TEMPERATURE EFFECTS; IONIZATION; POINT DEFECTS; SEMICONDUCTOR DOPING;

BULK CRYSTALS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0035575230     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00026-4     Document Type: Conference Paper

References (17)

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15. Internal photoluminescence in ZnSe homoepitaxy and application in blue-green-orange mixed-color light-emitting diodes
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