SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 664, Issue , 2001, Pages A1211-A1216

Photocarrier capture properties of light-induced defects in a-Si:H

(4) Stradins, Paul a Shimizu, Satoshi a Kondo, Michio a Matsuda, Akihisa a

a ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; ELECTRON TRAPS; HYSTERESIS; LIGHT ABSORPTION; PHOTOCONDUCTING MATERIALS; PHOTODEGRADATION; THERMAL EFFECTS;

LIGHT-INDUCED DEFECTS; PHOTOCARRIER TRAPS;

AMORPHOUS SILICON;

EID: 0035558214 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: 10.1557/proc-664-a12.1 Document Type: Article

Times cited : (6)

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