Alternating layer chemical vapor deposition (ALD) of metal silicates and oxides for gate insulators

Materials Research Society Symposium - Proceedings

Volumn 670, Issue , 2001, Pages

  Gordon, Roy G ^a   Becker, Jill ^a   Hausmann, Dennis ^a   Suh, Seigi ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELLIPSOMETRY; GATES (TRANSISTOR); INTERFACES (MATERIALS); MICROELECTRONICS; OXIDES; STOICHIOMETRY; ULTRATHIN FILMS;

GATE DIELECTRICS;

SILICATES;

EID: 0035557025     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-670-k2.4     Document Type: Conference Paper

References (8)