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Volumn , Issue , 2001, Pages 521-526
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Analysis of dielectric breakdown of SiO2 film induced by copper ion drift
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE;
CAPACITORS;
COPPER;
CURRENT VOLTAGE CHARACTERISTICS;
DIELECTRIC PROPERTIES;
ELECTRON TRAPS;
INTERFACES (MATERIALS);
LEAKAGE CURRENTS;
SECONDARY ION MASS SPECTROMETRY;
SILICA;
DIELECTRIC BREAKDOWN;
SEMICONDUCTING FILMS;
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EID: 0035555432
PISSN: 10480854
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (4)
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