Optimization of plating chemistry for dual damascene Cu metallization

Advanced Metallization Conference (AMC)

Volumn , Issue , 2001, Pages 215-219

  Jiang, Qing Tang ^a   Frank, Aaron ^a   Carpenters, Brad ^a   Carpio, Ron ^a   Ritzdorf, Tom ^a   Augur, R A ^a   Pfeifer, Klaus ^a   Luttmer, J D ^a  

^a SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; ANNEALING; COPPER COMPOUNDS; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; METALLIZING; OPTIMIZATION; PROCESS CONTROL; SCANNING ELECTRON MICROSCOPY; THIN FILMS;

BRIGHTENERS; SUPPRESSORS;

COPPER PLATING;

EID: 0035554806     PISSN: 10480854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Damascene copper electroplating for chip interconnections
2. Copper interconnects for high-volume manufacturing
3. Chemically induced defects during copper polish
4. Understanding and elimination defects in electroplated Cu films
5. Proc. advanced metallization conference
6. Factors influencing fill of IC features using electroplated copper