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Journal of Crystal Growth

Volumn 233, Issue 4, 2001, Pages 749-754

Long-range order in CdxZn1-x Te epilayers grown on GaAs substrates

(4) Lee, H S a Lee, J Y a Kim, T W b Park, H L c

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Kwangwoon University (South Korea)

c Yonsei University (South Korea)

Author keywords

A1. characterization; A1. crystal structure; A3. vapor phase epitaxy; B1. cadmium compounds; B2. semiconducting II VI materials; B3. light emitting diodes

Indexed keywords

CADMIUM COMPOUNDS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; HIGH RESOLUTION ELECTRON MICROSCOPY; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

EPILAYERS; SELECTED AREA ELECTRON DIFFRACTION PATTERN (SADP);

EPITAXIAL GROWTH;

EID: 0035546552 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01612-8 Document Type: Article

Times cited : (6)

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