Letter to the Editor on "Simulation of Ta2O5 gate ISFET temperature characteristics" by J.C. Chou, Y.S. Li, J.L. Chiang [Sensors and Actuators B 71 (2000) 73-76]

Sensors and Actuators, B: Chemical

Volumn 80, Issue 3, 2001, Pages 290-291

  Chou, Jung Chuan ^a   Li, Ying Shin ^a   Chiang, Jung Lung ^b  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Flat band voltage; ISFET; Point of zero charge; Ta2O5

Indexed keywords

EID: 0035545649     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(01)00896-6     Document Type: Letter

References (9)

1. Combined measurement of surface potential and zeta potential at insulator/electrolyte interface
2. PZC of insulators surface from capacitance-voltage characteristics of MIS and EIS structure
3. 2
4. 2 thin films
5. ISFET responses on a stepwise change in electrolyte concentration at constant pH
6. A generalized theory of an electrolyte-insulator-semiconductor field effect transistor
7. PZC and surface potential of tin oxide gate ISFET