Comment on "Simulation of Ta2O5 gate ISFET temperature characteristics" by Chou et al.

Sensors and Actuators, B: Chemical

Volumn 80, Issue 3, 2001, Pages 292-293

  Kosmulski, Marek ^a  

^a LUBLIN UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Isoelectric point; Point of zero charge; Tantalum oxide

Indexed keywords

EID: 0035545608     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(01)00897-8     Document Type: Letter

References (6)

1. 5 gate ISFET temperature characteristics
2. 2
3. Multisite proton adsorption modeling at the solid solution interface of (hydr)oxides: A new approach. Part I. Model description and evaluation of reaction constants
4. Multisite proton adsorption modeling at the solid solution interface of (hydr)oxides: A new approach. Part II. Applications to various important (hydr)oxides