In situ monitoring of molecular-beam-epitaxy grown Hg1-xCdxTe by Fourier transform infrared spectroscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1576-1579

  Badano, G ^a   Daraselia, M ^a   Sivananthan, S ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PYROMETRY; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

DETECTOR SPECTRAL RESPONSE; EMISSIVITY; REAL TIME IN SITU MEASUREMENTS; SPECTRAL RADIANCE; TEMPERATURE DETERMINATION;

MERCURY COMPOUNDS;

EID: 0035535364     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1387455     Document Type: Conference Paper

References (4)

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2. M. Daraselia, C. H Grein, S. Rujirawat, B. Yang, S. Sivananthan, F. Aquariden, and H. D. Shih, J. Electron. Mater. 28, 743 (1999).
3. B. V. Shanabrook, J. R. Waterman, J. L. Davis, and R. J. Wagner, J. Vac. Sci. Technol. B 11, 994 (1993).
4. D. S. Katzer and B. V. Shanabrook, J. Vac. Sci. Technol. B 11, 1003 (1993).