Fabrication of photonic quantum ring laser using chemically assisted ion beam etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1334-1338

  Kim, Jun Youn ^a   Kwak, Kyu Sub ^a   Kim, Jong Sam ^a   Kang, Bongkoo ^a   Kwon, O'Dae ^a,b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALIUM ARSENIDE; CHEMICALLY ASSISTED ION BEAM ETCHING; ETCH RATE; INCIDENT BEAM; PHOTONIC QUANTUM RING LASER; PHOTORESIST ETCH MASK; VERTICAL FACET;

ANGLE MEASUREMENT; ETCHING; ION BEAMS; LITHOGRAPHY; MASKS; PHOTORESISTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

SEMICONDUCTOR LASERS;

EID: 0035535268     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1382872     Document Type: Conference Paper

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