Structural and electronic properties of metal-silicide/silicon interfaces: A first-principles study

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1180-1185

  Yu, Byung Deok ^a   Miyamoto, Yoshiyuki ^b   Sugino, Osamu ^b   Sakai, A ^c   Sasaki, T ^d   Ohno, T ^d  

^a University of Seoul   (South Korea)

^b NEC CORPORATION   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DIMERIZATION; DIMERS; ELASTIC MODULI; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; LATTICE CONSTANTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

COBALT SILICIDE; DENSITY FUNCTIONAL THEORY; FIRST-PRINCIPLES TOTAL-ENERGY CALCULATIONS; GENERALIZED-GRADIENT APPROXIMATION; INTERFACIAL ORDERING; LINEARIZED-AUGMENTED-PLANE-WAVE; LOCAL-DENSITY APPROXIMATION; NICKEL SILICIDE; PLANE-WAVE PSEUDOPOTENTIAL CALCULATIONS; STRUCTURAL PROPERTIES;

INTERFACES (MATERIALS);

EID: 0035535246     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1381063     Document Type: Conference Paper

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