Silicon structures with dielectric insulation obtained by vertical anisotropic etching

Technical Physics Letters

Volumn 27, Issue 5, 2001, Pages 381-383

  Guk, E G ^a   Tkachenko, A G ^a   Tokranova, N A ^a   Granitsyna, L S ^a   Astrova, E V ^a   Podlaskin, B G ^a   Nashchekin, A V ^a   Shul'pina, I L ^a   Rutkovskii S V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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Indexed keywords

EID: 0035534738     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1376758     Document Type: Article

References (6)

1. N. A. Bryukhno, E. M. Zharkovskiǐ, Yu. A. Kontsevoǐ, et al., in Reviews on Electron Techniques, Ser. 3: Microelectronics (Moscow, 1987), Issue 4.
2. D. L. Kendall, Appl. Phys. Lett. 26, 195 (1975).
3. K. E. Bean and W. R. Runyan, J. Electrochem. Soc. 124 (1), 5C (1979).
4. S. Ottow, V. Lehmann, and H. Foll, J. Electrochem Soc. 143 (1), 385 (1996).
5. E. L. Warrick et al., Rubber Chem. Technol. 52 (3), 437 (1979).
6. D. L. Kendall, Annu. Rev. Mater. Sci. 9, 373 (1979).