Gas source molecular beam epitaxy growth and characterization of Ga0.51In0.49P/InxGa1-xAs/GaAs modulation-doped field-effect transistor structures

Semiconductor Science and Technology

Volumn 12, Issue 11, 1997, Pages 1472-1478

  Besikci, Cengiz ^a   Civan, Yavuz ^a   Ozder, Serhat ^a   Sen, Ozlem ^a   Jelen, Chris ^b   Slivken, Steve ^b   Razeghi, Manijeh ^b  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001293916     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/11/025     Document Type: Article

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