Critical dimension error analysis for 0.13 μm photolithography and beyond

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2884-2889

  Gau, Tsai Sheng ^a   Yen, Anthony ^a   Chen, Jeng Horng ^a   Yu, Shinn Sheng ^a   Chen, Chun Kuang ^a   Ke, Chih Ming ^a   Lin, Burn J ^a   Wang, Ping Ting C ^a,b  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b ASML Taiwan Ltd   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FOURIER TRANSFORMS; PHOTOLITHOGRAPHY; POLYNOMIALS; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SPURIOUS SIGNAL NOISE; TEMPERATURE DISTRIBUTION;

CRITICAL DIMENSION ERROR ANALYSIS; RESOLUTION ENHANCEMENT TECHNIQUE;

ERROR ANALYSIS;

EID: 0035519822     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1409380     Document Type: Article

References (6)

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