Behavior of oxygen in Ga-As melts with the range of as content up to 5 mass% equilibrated with B2O3 flux

Materials Transactions

Volumn 42, Issue 11, 2001, Pages 2434-2439

  Tajima, Kazuki ^a   Ogasawara, Takuma ^a   Narushima, Takayuki ^a   Ouchi, Chiaki ^a   Iguchi, Yasutaka ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Boron oxide; Distribution; Equilibrium; Gallium; Gallium arsenide; Gallium oxide; Interaction parameter; Oxygen; Thermodynamics

Indexed keywords

BORON COMPOUNDS; CRYSTAL GROWTH FROM MELT; OXYGEN; PHASE EQUILIBRIA; THERMAL EFFECTS; THERMODYNAMIC PROPERTIES;

INTERACTION PARAMETERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035519342     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.42.2434     Document Type: Article

References (18)