Simulating the effects of pattern density gradients on electron-beam projection lithography pattern transfer distortions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2652-2658

  Reu, P L ^a   Engelstad, R L ^a   Lovell, E G ^a   Magg, C K ^b   Lercel, M J ^b   Mackay, R S ^c  

^a University of Wisconsin Madison   (United States)

^b IBM   (United States)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; ETCHING; FINITE ELEMENT METHOD; INTEGRATED CIRCUIT LAYOUT; MASKS; SEMICONDUCTOR DEVICE MANUFACTURE; VECTORS;

ELECTRO BEAM PROJECTION LITHOGRAPHY; IMAGE PLACEMENT ERRORS; NEXT GENERATION LITHOGRAPHY; PATTERN DENSITY GRADIENTS; PATTERN TRANSFER DISTORTIONS;

ELECTRON BEAM LITHOGRAPHY;

EID: 0035519170     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1409387     Document Type: Article

References (3)

1. M. Lercel et al., J. Vac. Sci. Technol. B, these proceedings.
2. E. Cotte, R. Engelstad, E. Lovell, and C. Brooks, Proc. SPIE 3676, 429 (1999).
3. G. Frisque, E. Lovell, and R. Engelstad, Proc. SPIE 3997, 568 (2000).