Ion-implanted photoresist removal using water/carbon dioxide mixtures at elevated temperature and pressure

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2144-2148

  Chavez, K L ^a   Bakker, G L ^b   Hess, D W ^a  

^a Georgia Institute of Technology   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BORON; CARBON DIOXIDE; ION IMPLANTATION; MIXTURES; PHOSPHORUS; PRESSURE; REMOVAL; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS; WATER;

LOW IMPLANT LEVELS; SILICON SUBSTRATES; THIN CARBONIZED LAYER;

PHOTORESISTS;

EID: 0035519117     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1415519     Document Type: Article

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