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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 6, 2001, Pages 2851-2855

Ion kinetic energy control in dual plasma deposition of thin films

(5) Wang, L P a,b Tang, B Y a,b Gan, K Y a,b Tian, X B a Chu, P K a

a CITY UNIVERSITY OF HONG KONG (Hong Kong)

b HARBIN INSTITUTE OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRIC SPACE CHARGE; ION IMPLANTATION; KINETIC ENERGY; MAGNETRON SPUTTERING; PERMITTIVITY; SUBSTRATES;

DUAL PLASMA DEPOSITION;

THIN FILMS;

EID: 0035507403 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1410947 Document Type: Article

Times cited : (4)

References (21)

1
- 0042633781
- (1987) J. Appl. Phys. , vol.62 , pp. 4591
- Conrad, J.R.¹ Radtke, J.L.² Dodd, R.A.³ Worzala, F.J.⁴ Tran, N.C.⁵

2
- 0000968807
- (1997) Rev. Sci. Instrum. , vol.68 , pp. 1866
- Chu, P.K.¹ Tang, B.Y.² Cheng, Y.C.³ Ko, P.K.⁴

3
- 0030296195
- (1996) Surf. Coat. Technol. , vol.85 , pp. 70
- Wood, B.P.¹ Reass, W.A.² Henins, I.³

4
- 0006847179
- Gatlinburg, TN
- (1997) Proceedings of the 10th International Conference on Surface Modification of Metals by Ion Beams , pp. 153
- Tang, B.Y.¹ Chu, P.K.² Wang, S.W.³ Chow, K.W.⁴ Wang, X.F.⁵

5
- 0000735457
- (2000) J. Appl. Phys. , vol.87 , pp. 4094
- Kowk, D.T.K.¹ Zeng, X.C.² Chan, C.³ Chu, P.K.⁴

6
- 0003010239
- (2000) Surf. Coat. Technol. , vol.125 , pp. 84
- Mandl, S.¹ Thorwarth, G.² Schreck, M.³ Stritzker, B.⁴ Rauschenbach, B.⁵

7
- 36449000220
- (1994) Rev. Sci. Instrum. , vol.65 , pp. 3061
- Brown, I.G.¹

8
- 36549091727
- (1985) Appl. Phys. Lett. , vol.47 , pp. 358
- Brown, I.G.¹ Galvin, J.E.² Macgill, R.A.³

9
- 0031122992
- (1997) IEEE Trans. Plasma Sci. , vol.25 , pp. 386
- Geavit, S.M.¹ Ehrich, H.² Schuhmann, J.³

10
- 0001717489
- (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 815
- Anders, A.¹ Anders, S.² Brown, I.G.³ Dickinson, M.R.⁴ MacGill, R.A.⁵

11
- 0001213453
- (2000) Rev. Sci. Instrum. , vol.71 , pp. 4435
- Wang, L.P.¹ Gan, K.Y.² Tian, X.B.³ Tang, B.Y.⁴ Chu, P.K.⁵

12
- 0029322184
- (1995) IEEE Electron Device Lett. , vol.16 , pp. 220
- Cheung, K.P.¹ Pai, C.S.²

13
- 0028447325
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 1034
- Fang, S.¹ Mcvittie, J.P.²

14
- 0029371317
- (1995) J. Vac. Sci. Technol. B , vol.13 , pp. 1994
- Qin, S.¹ Bernstein, J.D.² Zhao, Z.³ Liu, W.⁴ Chan, C.⁵

15
- 0006805224
- (1995) Nucl. Instrum. Methods Phys. Res. B , vol.106 , pp. 636
- Qin, S.¹ Bernstein, J.D.² Zhao, Z.³ Chan, C.⁴

16
- 0030296110
- (1996) Surf. Coat. Technol. , vol.85 , pp. 56
- Qin, S.¹ Bernstein, J.D.² Chan, C.³ Shao, J.⁴ Denholm, S.⁵

17
- 0001456055
- (1994) J. Vac. Sci. Technol. B , vol.12 , pp. 880
- Emmert, G.A.¹

18
- 0033436158
- (1999) J. Vac. Sci. Technol. A , vol.17 , pp. 3322
- Barnat, E.¹ Lu, T.M.²

19
- 0032096520
- (1998) Diamond Relat. Mater. , vol.7 , pp. 884
- Hsu, C.Y.¹ Chen, L.Y.² Hong, F.C.N.³

20
- 36449009369
- (1991) Appl. Phys. Lett. , vol.58 , pp. 2027
- Koinuma, H.¹ Nagata, H.² Tsudahara, T.³ Gonda, S.⁴ Yoshimoto, M.⁵

21
- 36448999911
- (1994) Appl. Phys. Lett. , vol.65 , pp. 1030
- Chikyow, T.¹ Bedair, S.M.² Tye, L.³ Ei-Masary, N.A.⁴

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