Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment

Thin Solid Films

Volumn 398, Issue 399, 2001, Pages 637-640

  Chang, T C ^a,c   Mor, Y S ^b   Liu, P T ^c   Tsai, T M ^b   Chen, C W ^b   Sze, S M ^b,c   Mei, Y J ^d  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c National Nano Device Laboratory   (China)

^d Technology Institute   (China)

Author keywords

Boron implantation; Dielectric constant; Methylsilsesquioxane

Indexed keywords

CHEMICAL BONDS; LEAKAGE CURRENTS; PERMITTIVITY; SEMICONDUCTING BORON;

BORON IMPLANTATION TREATMENT;

DIELECTRIC FILMS;

EID: 0035507134     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01331-1     Document Type: Article

References (11)