40-GHz frequency dividers with reduced power dissipation fabricated using high-speed small-emitter-area AlGaAs/InGaAs HBTs

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1998, Pages 121-124

  Amamiya, Yasushi ^a   Niwa, Takaki ^a   Nagano, Nobuo ^a   Mamada, Masayuki ^a   Suzuki, Yasuyuki ^a   Shimawaki, Hidenori ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOSSES; ELECTRIC RESISTANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; VOLTAGE MEASUREMENT;

DEVICE DELAY TIME;

FREQUENCY DIVIDING CIRCUITS;

EID: 0032310079     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)