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Applied Physics A: Materials Science and Processing

Volumn 73, Issue 5, 2001, Pages 625-630

Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films

(9) Liu, J M a,b Yuan, G L a Chen, X Y a Liu, Z G a Du, Y W a Huang, Q c Li, J c Xu, S Y c Ong, C K c

a NANJING UNIVERSITY (China)

b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

c NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLIZATION; ELECTRON TUNNELING; GRAIN BOUNDARIES; HIGH TEMPERATURE EFFECTS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; OPTIMIZATION; PULSED LASER DEPOSITION; THIN FILMS;

INTER GRAIN TUNNELING; LOW FIELD MAGNETORESISTANCE (LFMR);

LANTHANUM COMPOUNDS;

EID: 0035500322 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390100823 Document Type: Article

Times cited : (13)

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