Low-field magnetoresistive property of partially crystallized [formula omitted] thin films by pulsed laser deposition

Journal of Applied Physics

Volumn 88, Issue 5, 2000, Pages 2791-2798

  Liu, J M ^a,b,c   Huang, Q ^d   li, J ^d   You, L P ^d   xu, S Y ^d   Ong, C K ^d   Liu, Z G ^a   du, Y W ^a  

^a NANJING UNIVERSITY   (China)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c National University of Singapore ^*

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

LANTHANUM COMPOUNDS; MANGANESE OXIDE; MICROSTRUCTURE; NANOCRYSTALS; PULSED LASER DEPOSITION; PULSED LASERS; STRONTIUM; STRONTIUM TITANATES; TEMPERATURE; TITANIUM COMPOUNDS; TUNNELLING MAGNETORESISTANCE;

DEPOSITION TEMPERATURES; EPITAXIAL MICROSTRUCTURE; LOW FIELD MAGNETO-RESISTANCE; MAGNETO TRANSPORT PROPERTIES; MAGNETORESISTIVE PROPERTY; MAGNETOTRANSPORT PHENOMENA; SPIN DEPENDENT TUNNELING; VARIABLE-RANGE HOPPING CONDUCTION;

THIN FILMS;

EID: 0037676976     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.1288693     Document Type: Article

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