Localization and detailed investigation of gate oxide integrity defects in silicon MOS structures

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 109-113

  Huth, S ^a   Breitenstein, O ^a   Huber, A ^b   Dantz, D ^b   Lambert, U ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

COP; Czochralski silicon; GOI; TEM; Thermography

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC BREAKDOWN; SILICON WAFERS; SUBSTRATES; THERMOGRAPHY (TEMPERATURE MEASUREMENT); TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL ORIGINATED PARTICLES (COP);

MOS DEVICES;

EID: 0035498686     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00680-3     Document Type: Conference Paper

References (7)

1. Localization of GOI defects in silicon MOS structures with lock-in IR-thermography
2. Microscopic lock-in thermography investigation of leakage sites in integrated circuits