Extraction of the Si-SiO2 interface trap layer parameters in MOS transistors using a new charge pumping analysis

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 1998, Pages 201-205

  Maneglia, Y ^a   Bauza, D ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA;

CHARGE PUMPING ANALYSIS;

MOSFET DEVICES;

EID: 0031640560     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)