The effect of CVD growth conditions of 6H-SiC epilayers on Al incorporation

Semiconductors

Volumn 35, Issue 10, 2001, Pages 1120-1122

  Zelenin, V V ^a   Korogodskii M L ^a   Lebedev, A A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

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Indexed keywords

EID: 0035486445     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1410647     Document Type: Article

References (11)

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