Capacitance-voltage characteristic as a trace of the exciton evolvement from spatially direct to indirect in quantum wells

Semiconductor Science and Technology

Volumn 16, Issue 10, 2001, Pages 822-825

  Tang, Yan ^a   Zheng, Houzhi ^a   Yang, Fuhua ^a   Tan, Pingheng ^a   Li, Yuexia ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; EXCITONS; PHOTOLUMINESCENCE; POSITIVE IONS;

QUANTUM CAPACITANCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035481091     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/10/302     Document Type: Article

References (15)