Spectroscopic studies of shallow defects in MBE GaSb

Journal of Crystal Growth

Volumn 81, Issue 1-4, 1987, Pages 298-303

  Nicholas, D J ^a   Lee, M ^a   Hamilton, B ^a   Singer, K E ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE - SPECTROSCOPIC ANALYSIS;

DONOR BINDING ENERGY; DOUBLE ACCEPTOR; GALLIUM ANTIMONIDE; MBE GROWTH; MBE LAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0022667439     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(87)90408-8     Document Type: Article

References (11)

1. Piezoemission of GaSb: Impurities and Bound Excitons
2. Linear and quadratic Zeeman effect of excitons bound to neutral acceptors in GaSb
3. Effective mass energies of excitons and acceptors in GaAs and GaSb